Growth of Nanowires through Experiments

Scientists observe nanowires through X-ray experiments reveal exact details of self-catalysed growth responsible for the evolving shape and crystal structure of the crystalline nanowires with desired properties.

Their observations on Nano wires reveals accurate details of the growth process that is responsible for crystal structure and shape of the crystalline nanowires. The experimental researches also provide new methods and approaches to make nanowires with desired properties for specific applications.

The semiconductor gallium arsenide (GaAs) is broadly utilized, for example in infrared remote controls, the high-recurrence segments of cell phones and for changing over electrical signs into light for fibre optical transmission, and in sun-oriented boards for arrangement in rocket..

To manufacture the wires, the researchers utilized a technique known as the self-catalysed Vapour-Liquid-Solid (VLS) strategy, in which small beads of fluid gallium are first saved on a silicon precious stone at a temperature of around 600 degrees Celsius. Light emissions particles and arsenic atoms are then coordinated at the wafer, where they are absorbed and break down in the gallium beads. 

Application of nanowires:

·         Electronic devices

·         Nanowire lasers

·         Sensing with silicon nanowire FET devices

If you have the latest updates and research on Material Science and Nanotechnology you can present, your thoughts and views in our upcoming conference Crystallography Congress 2018 in November 19-20, 2018.

Contact:

Jessica Mark

Program Manager | Crystallography Congress 2018

Email: novelmaterials@materialsconferences.org